Today, I am proud and excited to officially announce the availability of three new precision selective etch innovations from Lam Research: Argos®, Prevos™, and Selis®.
Designed to complement and extend Lam’s industry-leading etch solutions portfolio, these breakthrough products are enabling chipmakers to etch and modify films with ultra-high selectivity and angstrom-level precision to achieve the most advanced integrated circuit (IC) performance capabilities and accelerate their 3D roadmaps.
Before I share a bit about what differentiates Lam’s approach to selective etch, let’s first look at the complex challenges associated with creating next-generation chips in the 3D era.
The need for precision
Scaling (the shrinking of the tiny devices in chips such as transistors and memory cells) has never been easy but making the next generation of advanced logic and memory devices a reality requires creating new structures at the atomic scale. When working with dimensions this small, there is little room for variation.
Compounding the problem is a need to remove material isotropically, or, uniformly in all directions. As device architectures change in pursuit of higher performance chips, new processes are needed. In gate-all-around (GAA) structures, for example, sacrificial silicon germanium (SiGe) layers will need to be either partially or fully removed by isotropic etching, with no loss or damage to the neighboring silicon layers.
Precision selective etch and surface treatment
Precision selective etch is best visualized in the four-material example shown in the figures below, where typical requirements are to etch the material shown in green by a precise amount and at a controlled isotropic profile angle – without etching or damaging any of the other layers.
Precision surface treatment requires a material property modification of one layer to improve device performance without damaging or modifying the other layers.
New materials require precision energy tuning
When creating today’s device structures, a common processing step involves removing silicon (Si) while leaving a silicon oxide (SiO2) layer behind. In an ion based etch, we control what film is removed using masks which protect the layers that should not be removed.
With our selective etch products, we can selectively remove only silicon and leave behind the silicon oxide by creating an exceptionally low energy flux of etchants with energies greater than the Si-Si bonding energy (3.4 eV), but less than the silicon and oxygen (Si-O) bonding energy (8.3 eV) – a relatively small range of 4.9 eV.
New materials, however, have a dramatically smaller range. For example, removing only SiGe layers and not adjacent Si layers in a GAA device requires energy turning in a range of less than 0.3 eV.
Truly precise selective etch requires advanced high-resolution energy tuning as a fundamental part of the system design. This capability far exceeds the performance levels supported by conventional “bulk” etch approaches. Moreover, it requires a complex combination of added steps, processes, and chambers to meet the exacting requirements for atomic-layer accuracy, which is at the heart of Lam’s selective etch product designs.
Introducing Argos, Prevos and Selis: Taking selective etch to the next level
Lam’s new suite of precision selective etch tools and surface treatments are poised to accelerate chipmakers’ 3D logic and memory roadmaps – a major evolutionary leap forward for the semiconductor industry.
- Argos provides a revolutionary new selective surface treatment. The innovative element in the Argos system is MARS™ (metastable active radical source), which creates the very gentle radical plasma necessary for highly selective surface property modification needed in advanced logic applications.
- Prevos employs a chemical vapor reactor for extremely low energy, high precision selective etch. A new, proprietary chemistry catalyst has been developed specifically for the extreme high selectivity requirements of applications such as native oxide breakthrough, precision trim and recess.
- Selis takes energy tuning to a whole new level by controlling plasma with a low-energy radical source. It also has an extremely low energy processing mode designed for the most extreme applications where selectivity must be ultra-high, such as with the critical SiGe selective etch steps used to form GAA structures. The process is so precise that Selis can etch SiGe layers without damaging or roughening the critical Si layers.
Greater innovation through collaboration
Supporting our customers’ 3D roadmaps has required bold new developments in source technology, chemistries, materials science and other radical chamber hardware designs. I am enormously proud of the team we assembled at Lam to make these products a reality, which included some our top technologists focused on developing source technology and game-changing chamber hardware designs, and an amazing group of chemists focused on developing novel chemistries to support our innovative approach to etch processes and surface treatments. Working collaboratively with our customers and across technical specialties and product groups, they have produced breakthrough selective etch innovation that will make it possible for the world’s leading chipmakers to deliver the 3D logic and memory devices of the future.
Caution Regarding Forward-Looking Statements
This article contains forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995. Forward-looking statements include any statements that are not statements of historical fact, including statements regarding the strength of Lam’s product portfolio, the performance of our products, the results that our customers can achieve in using them, the impact of Lam’s products on the semiconductor industry, the requirements of our customers for future innovation and the ability of our tools to meet future demands and our customers’ future requirements. Forward-looking statements are subject to risks and uncertainties that could cause actual results to differ materially from the expectations expressed, including the risks and uncertainties described in our filings with the U.S. Securities and Exchange Commission, including specifically the Risk Factors described in our annual report on Form 10-K and quarterly reports on Form 10-Q. You should not place undue reliance on forward-looking statements. We undertake no obligation to update any forward-looking statements.