View PDFLam Research Corporation Achieves Productivity Breakthrough for Integrated SAC Etch FREMONT, Calif., January 21, 2002—Lam Research Corporation (Nasdaq: LRCX) today announced a productivity breakthrough for integrated (in situ) self-aligned contact (SAC) etch. Results of a customer evaluation showed etch rates of at least 30 percent higher than rates for the 3 competing systems also tested—while retaining the high corner nitride selectivity required. The capability is achieved on Lam's Exelan® High Performance dielectric etch system with Dual Frequency ConfinedTM (DFCTM) technology, the industry's only fully confined plasma technology.
Lam offers the only completely integrated SAC etch process, which combines SAC etch, resist strip, and etch stop layer removal—all in one chamber—instead of 3 separate chambers. Integrated processing provides a significant cost-of-ownership advantage in addition to superior performance.
According to Jeff Marks, Lam's vice president of dielectric etch, "Customers are just beginning to realize the benefits of integrated processing. Previously, the mixing of process steps in situ was believed too complex and difficult to control for production; now, we have developed technology that addresses these concerns. We expect integrated processing to become an industry-wide trend over the next couple of years."
Lam's unique DFC technology and a low residence time reactor design allow a wide process window that enables high throughput, high selectivity, and integrated process capability. Lam's DFC technology also enables Clean ModeTM operation, preventing chamber wall contamination and memory effects for consistent performance. It also allows for an in situ clean after each wafer, Waferless AutocleanTM, significantly increasing the mean time between clean for high productivity.
This press release contains certain forward-looking statements which are subject to the Safe Harbor provisions created by the Private Securities Litigation Reform Act of 1995. Such forward-looking statements include those relating to process and machine performance, cost advantages, throughput projections, and other process and productivity projections, among others. Such statements are based on current expectations and are subject to risks, uncertainties, and changes in condition, significance, value and effect including those risks detailed in documents filed with the Securities and Exchange Commission, and specifically the report on Form 10-K for the fiscal year ended June 24, 2001 and the Form 10-Q for the quarter ended September 23, 2001, which could cause actual results to vary from expectations. The company undertakes no obligation to update the information in this Press Release.
Lam Research Corporation is a leading supplier of wafer fabrication equipment and services to the world’s semiconductor industry. Lam’s common stock trades on the Nasdaq National Market under the symbol LRCX. The Company’s World Wide Web address is http://www.lamrc.com.
A 0.20-micron self-aligned contact structure
with greater than 20:1 corner nitride selectivity.