Atomic-Scale Processing Heats Up Tampa at the AVS Symposium
stock photo man speaking on stage
Oct 23, 2017

Some of the greatest minds in science and technology will be convening in Tampa for the 64th annual AVS International Symposium & Exhibition starting on October 29, 2017. Among the topics of discussion will be challenges associated with cutting-edge materials, processing, and interfaces in the research and manufacturing communities. Within this multi-disciplinary environment, a primary area of focus will be technologies that enable continued device scaling, including advances in processes such as atomic layer deposition (ALD) and atomic layer etching (ALE).

Lam is proud to be a Silver Sponsor of both the Plasma Science and Technology Division and Thin Film Division programs, which will cover topics ranging from fundamental studies to manufacturing applications. Each year, new developments presented during these sessions are closely watched by attendees from the semiconductor industry as they often hold important keys for future chipmaking. With the continued development of 3D device architectures and integration of new materials, the latest updates in these fields should fuel many interesting and important discussions.

Atomic-Scale Processing Presentations

As features continue to shrink on the latest chips, atomic-level control is becoming increasingly important. Further development of manufacturing capabilities like ALD and ALE that deliver this level of control is critical. Hear about some of the latest advances in atomic-scale processing from Lam and our collaborators at the following presentations.

Strategies to Control the Etch per Cycle During Atomic Layer Etching of SiO2 and SiNx
Ryan Gasvoda (Colorado School of Mines); S. Wang, E.A. Hudson (Lam Research); S. Agarwal (Colorado School of Mines)
Thursday, November 2, 8:00 AM

(Invited) Directional Atomic Layer Etching: First Principles, Modelling and Applications
Thorsten Lill, K. Kanarik, I.L. Berry, S. Tan, Y. Pan, V. Vahedi, R.A. Gottscho (Lam Research)
Thursday, November 2, 8:40 AM

Ion Energy Control During Remote Plasma ALD for Tuning Material Properties of Transition Metal Nitrides
Tahsin Faraz (Eindhoven University of Technology); H.C.M. Knoops (Oxford Instruments Plasma Technology); S. Karwal, M.A. Verheijen, A.A. van Helvoirt (Eindhoven University of Technology); D.M. Hausmann, J. Henri (Lam Research); M. Creatore, W.M.M. Kessels (Eindhoven University of Technology)
Thursday, November 2, 4:40 PM

Understanding the Challenges in Atomic Layer Deposition of SiNx Through Identification of the Surface Reaction Mechanisms
Rafaiel Ovanesyan (Colorado School of Mines); D.M. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Thursday, November 2, 5:00 PM

Effect of Non-Uniform Polymer Deposition on the Atomic Layer Etching of 3D Features in SiO2
Chad Huard (University of Michigan); Y. Zhang, S. Sriraman, A. Paterson (Lam Research); M.J. Kushner (University of Michigan)
Friday, November 3, 9:40 AM

Professional Development Forum

For students and recent graduates interested in learning about career opportunities in the semiconductor industry, the Electronic Materials and Photonics Division (EMPD) will host an industrial forum on Tuesday, October 31, starting at 6:45 PM. Lam is pleased to sponsor this valuable networking event, and one of our technology experts will be on hand to talk about what it’s like to work in the chipmaking world.

Complete schedules and registration information can be found on the AVS Symposium website. We look forward to seeing you at the conference.

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