Examine the IoT Era Up Close at the AVS Symposium
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Oct 8, 2018

The AVS 65th International Symposium and Exhibition begins on October 21st in beautiful Long Beach, California. Scientists, engineers, and industry leaders from around the globe will gather to learn and share topics across sixteen parallel sessions. This year’s theme is “Materials, Interfaces and Process Technology for the IoT Era.” The IoT theme will be represented throughout the week across nineteen different sessions programmed by many divisions, groups, and focus topics. In addition to the IoT sessions, you’ll also enjoy discussions related to the technologies that enable continued device scaling, including advances in processes such as atomic layer deposition (ALD) and atomic layer etching (ALE).

Once again, Lam is proud to be a Silver Sponsor of both the Plasma Science and Technology Division and Thin Film Division programs, which will cover topics ranging from fundamental studies to manufacturing applications. The new developments presented during these sessions are closely watched the semiconductor industry and often hold important innovations for future chipmaking. With the continued development of 3D device architectures and integration of new materials, the latest updates in these fields often spark interesting and important discussions.

Lam Experts Share Innovations

As features on the latest chips continue to shrink, atomic-level control becomes increasingly important. The ongoing development of manufacturing capabilities like ALD and ALE to deliver this level of control is critical. Learn about some of the latest advances in atomic-scale processing from Lam and our collaborators at the following presentations.

Scaling Up of an Electrochemical Atomic Layer Deposition of Copper
D. Dictus, Lam Research Corporation, Belgium; Aniruddha Joi, Lam Research Corporation; G. Alessio Verni, Lam Research Corporation, Belgium; K. Vandersmissen, Imec, Belgium; B. Frees, Lam Research Corporation, Belgium; Y. Yezdi, Lam Research Corporation
Monday, October 22, 11:40am

Time and Space-Resolved Diagnostics of a Self-Neutralized Ion Beam Extracted from a Pulsed Plasma
Ryan Sawadichai, Y.-M. Chen, University of Houston; S. Tian, Lam Research Corporation; V.M. Donnelly, P. Ruchhoeft, D.J. Economou, University of Houston
Tuesday, October 23, 6:30pm

Plasma Processing of Phase Change Materials for PCRAM
N.D. Altieri, Ernest Chen, J.P. Chang, University of California, Los Angeles; S.W. Fong, C.M. Neumann, H.-S. Wong, Stanford University; M. Shen, T.B. Lill, Lam Research Corporation
Wednesday, October 24, 6:00pm

The Smoothing Effect in Atomic Layer Etching (ALE)
Keren Kanarik, S. Tan, W. Yang, I.L. Berry, T.B. Lill, Y. Pan, R.A. Gottscho, Lam Research Corporation
Thursday, October 25, 3:20pm

Self-neutralized Nearly Monoenergetic Positive Ion Beam Extracted From a Pulsed Plasma
Ya-Ming Chen, R. Sawadichai, University of Houston; S. Tian, Lam Research Corporation; V.M. Donnelly, D.J. Economou, P. Ruchhoeft, University of Houston
Thursday, October 25, 4:40pm

Professional Development Forum

On Tuesday at 6:45pm, join Francisco Juarez, Senior Director of Engineering at Lam, as he describes what it’s like to work at Lam Research as well as its products, future directions, and career opportunities. This forum provides an open dialogue between Lam Research and young scientists and engineers.

Complete schedules and registration information can be found on the AVS Symposium website. We look forward to seeing you at the conference.

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