As data centers strain under surging AI workloads and enormous energy demand, the semiconductor industry is being pushed toward a generational shift. In the latest issue of Power Electronics News, David Haynes, vice president of Specialty Technologies at Lam Research, explains why gallium nitride (GaN) is a compelling alternative to silicon—and why moving GaN manufacturing to 300‑mm wafers is a pivotal milestone.
By combining GaN’s inherent advantages in efficiency, high‑frequency operation, and fast switching with the scale and maturity of 300‑mm semiconductor fabs, the industry can deliver denser, more efficient power solutions tailored to the unprecedented needs of modern data centers.
Read the article "GaN Goes Big: How 300 mm Wafers are Powering the Next Generation of Data Centers."