A joint paper from Lam Research, ASML, and imec puts 20 nm metal pitch in focus
Driving the news: Lam Research, ASML, and imec presented a joint paper at the 2026 Symposium on VLSI Technology and Circuits showing the first demonstration of pitch 20 nm logic interconnect yield validation with Ru (ruthenium) direct metal etch patterned with single-exposure high-NA EUV and enabled by Lam’s Aether® technology.
Why it matters: Reducing multi-patterning complexity at advanced nodes is critical to sustaining cost, yield, and scaling. Fewer patterning steps makes advanced scaling more manufacturable.
The big picture: The continued extension of scaling beyond the limits of 0.33NA EUV resolution has driven the introduction of increased multiple patterning steps, thereby increasing complexity and limiting process windows. As a result, we see longer cycle times, restrictions in design, and added cost per layer. High‑NA EUV could restore scaling efficiency with direct print. This work shows a credible path toward that goal through integrated ecosystem innovation.
Aether is ideal for high-NA EUV because smaller pitch sizes make traditional resist tradeoffs harder to manage; Lam’s dry resist and development process improves resolution while reducing defectivity, helping preserve yield and scanner productivity at the dimensions high-NA is designed to print.
The research details:
- The work demonstrates 10 nm ruthenium metal lines patterned in 20nm pitch with single-exposure high-NA EUV and Aether resist.
- The approach reduces dependence on multi-patterning schemes required at advanced nodes.
- Lam’s Aether technology supports resist and pattern transfer performance with lower defectivity and faster cycle time at high resolution.
- The collaboration spans expertise at Lam Research (process), ASML (lithography), and imec (integration and validation).
Ru metal lines with 20nm pitch (cross section view and top-down view). Due to hNA single exposure, no pitch walking is present.
The bottom line: High-NA EUV will not advance on lithography alone. This result shows how coordinated ecosystem R&D can turn leading-edge research into a more practical path for continued scaling.
Read the complete paper in the proceedings of 2026 IEEE/JSAP Symposium on Technology and Circuits: “High Yield Sub 20 nm Ru Direct Metal Etch Enabled by Single-Exposure 0.55NA EUV and dry MOR Technology”
Gosia Jurczak is managing director, Engineering
--------------------
Caution Regarding Forward-Looking Statements
Statements made in this article that are not of historical fact are forward-looking statements and are subject to the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to, but are not limited to: industry trends, demand, expectations and requirements; the requirements of our customers; and the capabilities and performance of our products. Some factors that may affect these forward-looking statements include: business, economic, political and/or regulatory conditions in the consumer electronics industry, the semiconductor industry and the overall economy may deteriorate or change; the actions of our customers and competitors may be inconsistent with our expectations; trade regulations, export controls, tariffs, trade disputes, and other geopolitical tensions may inhibit our ability to sell our products; supply chain cost increases, tariffs and other inflationary pressures have impacted and may continue to impact our profitability; supply chain disruptions or manufacturing capacity constraints may limit our ability to manufacture and sell our products; and natural and human-caused disasters, disease outbreaks, war, terrorism, political or governmental unrest or instability, or other events beyond our control may impact our operations and revenue in affected areas; as well as the other risks and uncertainties that are described in the documents filed or furnished by us with the Securities and Exchange Commission, including specifically the Risk Factors described in our most recent annual report on Form 10-K or subsequent quarterly report on Form 10-Q. These uncertainties and changes could materially affect the forward-looking statements and cause actual results to vary from expectations in a material way. The Company undertakes no obligation to update the information or statements made in this article.