As more data-intensive artificial intelligence applications come online, especially in edge devices, the need for significant advancements in 3D NAND technology is paramount. That’s because AI requires vast amounts of data, which means a need for high speed and increased storage solutions.
But to harness full potential of AI, we must contend with several grand challenges to enable 1,000-layer scaling, among them:
- Cryogenic high-aspect ratio etching
- Advanced wordline metallization
- Wordline pitch scaling
- Simplified integration
Lam is taking the challenges head on. Our breakthrough innovations, especially in cryogenic etch technology, enable 3D NAND that increases the density and capacity of the storage and the speed of the data and output.
As we navigate the complexities of the AI era, the path to 1,000-layer 3D NAND represents more than just a technological advancement; it symbolizes a leap toward meeting future data demands.
Harmeet Singh is GVP and GM of Etch
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- The Road to 1,000 Layer 3D NAND
- Scaling to 1,000-Layer 3D NAND in the AI Era