ALD Conference and ALE Workshop Explore Nanoscale Processing
stock photo man speaking on stage
Jul 25, 2016

Chip designs are changing. Features are shrinking to incredibly small dimensions and radically new device architectures are being devised to supply consumers with smaller, more powerful electronics. Atomic layer deposition (ALD) and atomic layer etching (ALE) play key roles in fabricating advanced chips because they can produce features with extraordinary control. New developments in these enabling technologies will be the focus of the 16th International Conference on Atomic Layer Deposition (ALD 2016), which takes place July 24-27 in Dublin, Ireland. The conference also incorporates the 3rd International Workshop on Atomic Layer Etching. Together these create a comprehensive forum for discussion of the science and technology of atomic-scale processing by experts in both the ALD and ALE communities.

Lam is pleased to be a platinum sponsor of both ALD 2016 and the ALE Workshop. We are also a sponsor of the best student paper competition, which was established to recognize outstanding research performed by a graduate student in the field of ALD. One of Lam’s expert technologists will give a tutorial entitled “Overview of Atomic Layer Etching,” which will cover silicon ALE as a case study and explore various classification schemes.

To help advance understanding of this complex technology, Lam has been collaborating with researchers at leading universities around the world to study ALD/ALE mechanisms; analyze thin film composition, structure, and properties; and develop and integrate these atomic-scale processes into device manufacturing. The results from some of this work will be shared at the conference, as listed below.


ALD Conference

Carbon Incorporation Mechanism during Plasma-Assisted ALD of SiCxNy Films
R. Ovanesyan, N. Leick, R. Gasvoda (Colorado School of Mines); K. Kelchner, D. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Wednesday, July 27, 2:30 PM

ALD of High Quality SiNx Using DSBAS + N2 Plasma on Planar and 3D Substrates
T. Faraz, M.V. Drunen (Eindhoven University); H.C.M. Knoops (Eindhoven University, Oxford Instruments); A. Mallikarjunan, I. Buchanan (Air Products); D. Hausmann, J. Henri (Lam Research); W.M.M. Kessels (Eindhoven University)
Wednesday, July 27, 2:45 PM

Surface Reactions during Plasma-Assisted Atomic Layer Deposition of SiNx from Silicon Amides
N. Leick, Rafaiel Ovanesyan, R. Gasvoda, P. Walker (Colorado School of Mines); V. Pallem, B. Lefevre (Air Liquide); K. Kelchner, D. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Wednesday, July 27, 3:00 PM

Doping of High-Aspect Ratio Silicon Structures Using Thin Film Dopant Sources Grown by PALD
B. Kalkofen, A.A. Amusan (Otto von Guericke University); M. Lisker (IHP); Y.S. Kim (Lam Research); E.P. Burte (Otto von Guericke University)
Wednesday, July 27, 4:45 PM


ALE Workshop

Tutorial: Overview of Atomic Layer Etching
K. Kanarik (Lam Research)
Sunday, July 24, 3:15 PM

Investigating the Role of Neutral Transport in ALE and RIE Processes Using a 3-Dimensional Monte Carlo Feature Profile Model
C.M. Huard, M.J. Kushner (University of Michigan); Y. Zhang, S. Sriraman, A. Paterson (Lam Research)
Monday, July 25, 4:30 PM


Complete schedules and registration information can be found on the ALD 2016 website.