State-of-the-art advances in plasma research and thin film science will be discussed at the AVS 63rd International Symposium and Exhibition, being held November 6-11 in Nashville, Tennessee. This interdisciplinary meeting is ideally suited to sharing the latest research results on materials, surfaces, interfaces, and processing. A big focus of the meeting is technologies to enable continued device scaling, including advances in processes such as atomic layer deposition (ALD) and atomic layer etching (ALE). Technology inflections, such as advanced transistor and memory strategies, will also be on stage. Here’s a summary of Lam’s participation, including sponsorships, outreach, and technical talks.
Thin Films, Plasma Science, and Surface Science
Lam is a Silver Sponsor of both the Thin Film Division and the Plasma Science and Technology Division, which host sessions ranging from fundamental studies to manufacturing applications. We are also delighted to support, “Celebrating a Life in Surface Science: A Symposium in Honor of John T. Yates, Jr.” Organized by the Surface Science Division, this all-invited session takes place Thursday, November 10 at 2:00 PM.
The Electronic Materials and Photonics Division (EMPD) will host an industrial forum for students and recent graduates interested in learning about career opportunities in the semiconductor industry. Lam is pleased to sponsor “Careers at Lam Research,” which will be held Tuesday, November 8 at 6:45 PM. Lam technologist Adrien LaVoie will share an overview of the company and describe innovations and current areas of research. After the presentation, there will be a question-and-answer period and informal discussion.
You can hear about some of the latest advances from Lam and our collaborators at the following presentations, including two invited talks by our technology experts.
Dual Channel Si/SiGe Fin Patterning for 10 nm Node and Beyond [PS-MoM-4] F.L. Lie, E. Miller, P. Xu, S. Sieg, M. Sankarapandian (IBM Research); S. Schmitz, P. Friddle (Lam Research); G. Karve, J. Strane (IBM Research); K.Y. Lim, K. Akarvardar, M.G. Sung (GlobalFoundries); S. Kanakabasapathy (IBM Research)
Monday, November 7, 9:20 AM
Hybrid Fin Reveal for Tight Fin Pitch Technologies [PS-MoM-10] P. Xu (IBM Research); P. Wang (Lam Research); T. Devarajan (IBM Research); B. Nagabhirava, A. Basavalingappa (Lam Research); F.L. Lie, J. Strane, M. Sankarapandian, S. Mehta, R. Conti (IBM Research); M. Goss (Lam Research); D. Canaperi, D. Guo, S. Kanakasabapathy (IBM Research)
Monday, November 7, 11:20 AM
(Invited) Emerging Processing Challenges for Advanced Memory Technologies [EM+MI+MN-TuA-1] B. van Schravendijk (Lam Research)
Tuesday, November 8, 2:20 PM
Ion Beam Etch Process Optimization for the Patterning of High Density STT-RAM Pillars [PS-ThP-12] V. Ip (Veeco); S. Huang (Lam Research); S.D. Carnevale (Veeco); I.L. Berry (Lam Research); K. Rook (Veeco); T.B. Lill (Lam Research); A.P. Paranjpe, F. Cerio (Veeco)
Thursday, November 10, 6:00 PM poster session
Chemical Vapor Deposition & Atomic Layer Deposition
In Situ FTIR Study of the Surface Reactions During Plasma-Assisted Atomic Layer Deposition of SiNx from Silicon Amides [TF-MoM-10] N. Leick, R.A. Ovanesyan, R.J. Gasvoda, P. Walker (Colorado School of Mines); K.M. Kelchner, D.M. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Monday, November 7, 11:20 AM
An Analytic Expression for Reactant Utilization in CVD and ALD Chambers [TF-TuM-1] E. McInerney (Lam Research)
Tuesday, November 8, 8:00 AM
Plasma Assisted Atomic Layer Deposition of SiCxNy Films with Methylamine as the Carbon Source [PS+TF-WeA-8] R. Ovanesyan, N. Leick, R.J. Gasvoda (Colorado School of Mines); K.M. Kelchner, D.M. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Wednesday, November 9, 4:40 PM
(Invited) Plasma Enhanced Atomic Layer Deposition in the Semiconductor Industry [PS+TF-WeA-9] A. LaVoie (Lam Research)
Wednesday, November 9, 5:00 PM
Substrate Biasing During Remote Plasma-ALD on Planar and 3D Substrates [PS+TF-WeA-11] T. Faraz (Eindhoven University of Technology); H.C.M. Knoops (Oxford Instruments); D.M. Hausmann, J. Henri (Lam Research); W.M.M. Kessels (Eindhoven University of Technology)
Wednesday, November 9, 5:40 PM
Plasma Etching & Atomic Layer Etching
System Trade-offs of Atomic Layer Etching (ALE) of High Aspect Ratio 3D Features [PS+TF-WeM-4] C. Huard (University of Michigan); Y. Zhang, S. Sriraman, A. Paterson (Lam Research); M.J. Kushner, (University of Michigan)
Wednesday, November 9, 9:00 AM
Plasma-Based Removal of Native Oxide Layers on Si and SiGe Substrates While Minimizing Surface Residues [PS-WeA-1] D. Metzler, Chen Li (University of Maryland); C.S. Lai, E.A. Hudson (Lam Research); G.S. Oehrlein (University of Maryland)
Wednesday, November 9, 2:20 PM
Plasma-Enhanced Germanium Atomic Layer Etching (ALE) [PS-WeA-4] W. Yang, S. Tan, K. Kanarik, R. Arghavani, T.B. Lill, Y. Pan (Lam Research)
Wednesday, November 9, 3:20 PM
In Situ Optical Diagnostics during Atomic Layer Etching of SiO2 using Alternating Cycles of C4F8 and Ar Plasma [PS-WeA-12] N. Leick, R. Gasvoda (Colorado School of Mines); A. van de Steeg (Eindhoven University of Technology); R. Ovanesyan (Colorado School of Mines); R. Bhowmick, E.A. Hudson (Lam Research); S. Agarwal (Colorado School of Mines)
Wednesday, November 9, 6:00 PM
Complete schedules and registration information can be found on the AVS Symposium website. We look forward to seeing you at the conference.