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Self-aligned backside contact (SABC) architectures in advanced GAA transistors expand the process window, reducing defects and improving chip yield.

Molybdenum hybrid metallization is driving innovation in semiconductor materials for AI, 5G, and data centers. These advances boost performance, sustainability, and efficiency in chip manufacturing.

The article discusses the challenges and solutions for back-end-of-line (BEOL) patterning at the 3-nm semiconductor node, focusing on controlling critical process parameters to manage edge placement error (EPE) and critical dimension (CD) variability.

Cooperative robots take center stage at FIRST Global in Panama Lam is a pioneer in semi mechatronics, like Dextro

Students at a growing number of U.S. schools learn the “why” of advanced 3D processes SEMulator3D® helps students with immersive training on leading edge technologies.