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The article discusses the challenges and solutions for back-end-of-line (BEOL) patterning at the 3-nm semiconductor node, focusing on controlling critical process parameters to manage edge placement error (EPE) and critical dimension (CD) variability.

The latest advancements in semiconductor interconnect technologies, focusing on optimizing metal pitch structures for sub-2nm nodes.

BEOL module processing faces challenges as chipmakers move to the 3 nm node and beyond. A semi-damascene integration scheme with airgap structures may help reduce RC delay time.

Introduction As we approach the 1.5nm node and beyond, new BEOL device integration challenges will be presented. These challenges include the need for smaller metal pitches, along with support for...