Blog

Filling complex, high aspect ratio structures is a challenge for 3D NAND, DRAM, and logic chipmakers. Lam’s Aaron Fellis, vice president and general manager of dielectric atomic layer deposition...

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to...

Semiconductor process development is no easy task, with each generation of devices more difficult and expensive to create. Traditional cycles of build-and-test development are becoming obsolete,...

Lam’s newest product in its line of GAMMA® dry photoresist strip systems, brings the performance of the GAMMA® GxT® 300 mm to 200 mm wafer processing. The GAMMA GxT has been specifically...

In today’s press release below, Lam announced the new Striker® FE platform featuring its patented ICEFill™ technology, which provides bottom-up filling in complex high aspect ratio (HAR)...