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Tiny changes in critical dimension, gate height, and similar features of advanced logic devices, such as FinFET SRAM, can affect yield. Through virtual experiments using the SEMulator3D® platform, the Semiverse Solutions team discusses how material stress and mechanical deformation resulting from these changes can be managed to enhance device performance.

AI’s evolution could be thwarted by electrical resistance in 3D architectures. Molybdenum, a breakthrough material, reduces resistance, improves performance.

Ion Beam Etch (IBE) is a promising technology for extreme ultraviolet (EUV) lithography by significantly improving line edge roughness (LER) and line width roughness (LWR).

A microchip (also known as a “chip” or “integrated circuit” [IC]) is a chunk of semiconducting material embedded with billions of transistors.

The semiconductor industry is transitioning from tungsten to molybdenum (Mo) to meet the demands of the AI era Mo’s lower resistivity and lack of barrier layer enable scalability while...