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- |May 30, 2023|
As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have...
- |Apr 13, 2023|
Introduction In logic devices such as FinFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic...
- |Mar 22, 2023|
Introduction Cu’s resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of...
- |Feb 28, 2023|
With decreasing dynamic random-access memory (DRAM) cell sizes, DRAM process development has become increasingly difficult. Bit-line (BL) sensing margins and refresh times have become problematic...
- |Feb 16, 2023|
SEMICON Korea 2023 kicked off with a keynote speech, “Accelerating Innovation – From Lab to Fab,” delivered by Pat Lord, EVP of the Customer Support Business Group and Global Operations. Pat...