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Lam Research won two prestigious 2026 Edison Awards, for ALTUS® Halo and Akara®

Pattern-dependent etch can lead to variations across the same chip. Dummy fill and SEMulator3D® help reduce shallow trench isolation and recess nonuniformity.

Everything—NAND, Logic, DRAM, and packaging—is going 3D. The 3D era demands deeper etch and precise deposition to build taller, tighter devices.

In this edition of Semi 101, we explore the evolution of transistor architectures that have enabled logic scaling.

In DRAM SAQP, small process variations can compound into pitch walk and, with LER, create line-bridge defects. Monte Carlo virtual fabrication reveals these interactions to tighten process windows and reduce wafer experimentation.