Blog

SEMulator3D® Analytics is useful in calibrating FinFET device profiles, helping engineers achieve high precision in modeling fin etch depth and critical dimensions.

Self-aligned backside contact (SABC) architectures in advanced GAA transistors expand the process window, reducing defects and improving chip yield.

The article discusses the challenges and solutions for back-end-of-line (BEOL) patterning at the 3-nm semiconductor node, focusing on controlling critical process parameters to manage edge placement error (EPE) and critical dimension (CD) variability.

Students at a growing number of U.S. schools learn the “why” of advanced 3D processes SEMulator3D® helps students with immersive training on leading edge technologies.