Blog

Lam’s Aether® dry‑resist technology plays a key role in enabling next-gen logic chips, including the latest 2 nm node

DRAM is volatile memory that has the advantages of simplicity and high density. Lam is continuously innovating for each DRAM inflection as data-intensive AI requires more and more data at higher speeds.

Manufacturing breakthroughs in advanced chip packaging—especially heterogeneous integration and 3D stacking—are critical to powering the future of AI.

Watch the video on the next wave of semiconductor innovation with advanced packaging solutions from Lam Research.

Self-aligned backside contact (SABC) architectures in advanced GAA transistors expand the process window, reducing defects and improving chip yield.

Molybdenum hybrid metallization is driving innovation in semiconductor materials for AI, 5G, and data centers. These advances boost performance, sustainability, and efficiency in chip manufacturing.

The article discusses the challenges and solutions for back-end-of-line (BEOL) patterning at the 3-nm semiconductor node, focusing on controlling critical process parameters to manage edge placement error (EPE) and critical dimension (CD) variability.

Students at a growing number of U.S. schools learn the “why” of advanced 3D processes SEMulator3D® helps students with immersive training on leading edge technologies.

At Lam we're pairing human ingenuity with advanced mechatronics and automation to solve big challenges for our customers. That same spirit will be on display at the 2025 FIRST Global Challenge.

Lam CVP David Fried explains how Fabtex Yield Optimizer is the newest Semiverse Solutions technology to help the semiconductor industry achieve higher yields