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Lam’s Semiverse Solutions team used digital twin modeling to explore a self-aligned CFET architecture that could help extend CMOS scaling beyond 10 Å.

Lam Semiverse® Solutions engineers used SEMulator3D® stress modeling to show how channel thickness, fin width, and lateral etch can be optimized to reduce stress non-uniformity and improve gate-all-around nanosheet transistor performance.

Learn how feedforward control helps semiconductor manufacturers reduce wafer scrap and improve yield. Semiverse Solutions simulation demonstrated a pass-rate increase from 60.82% to 96.77% through intelligent process correction.

SEMulator3D virtual fabrication optimizes backside power networks by modeling nTSV-to-BPR connectivity.

As AI accelerates demand for advanced chips, sustainability is becoming essential for long-term growth

Pattern-dependent etch can lead to variations across the same chip. Dummy fill and SEMulator3D® help reduce shallow trench isolation and recess nonuniformity.

In DRAM SAQP, small process variations can compound into pitch walk and, with LER, create line-bridge defects. Monte Carlo virtual fabrication reveals these interactions to tighten process windows and reduce wafer experimentation.

Lam solutions for large 300-mm wafers aid in MEMS evolution. MEMS sensors are crucial in AI-powered devices and IoT. applications.

SEMulator3D® Analytics is useful in calibrating FinFET device profiles, helping engineers achieve high precision in modeling fin etch depth and critical dimensions.

Self-aligned backside contact (SABC) architectures in advanced GAA transistors expand the process window, reducing defects and improving chip yield.

The article discusses the challenges and solutions for back-end-of-line (BEOL) patterning at the 3-nm semiconductor node, focusing on controlling critical process parameters to manage edge placement error (EPE) and critical dimension (CD) variability.

Students at a growing number of U.S. schools learn the “why” of advanced 3D processes SEMulator3D® helps students with immersive training on leading edge technologies.

Fabtex™ Yield Optimizer is a new Semiverse® Solutions product designed to improve yield and reduce process variability in high-volume semiconductor manufacturing.

Virtual twins and process modeling speed up semiconductor development by simulating and optimizing designs before fabrication. This case study shows how to address etch uniformity issues from etch loading in slit patterns, enabling faster, more precise process optimization.

Lam Research offers a range of advanced tools and technologies designed to support semiconductor manufacturing, focusing on precision, innovation, and improving chip production processes. These solutions include etch and deposition systems, process control tools, and software products aimed at next-generation device fabrication.

Hybrid metallization using Mo is a promising alternative to conventional copper dual damascene.

Lam Research is addressing critical challenges in the U.S. semiconductor industry by partnering with universities to enhance semiconductor engineering education through Semiverse® Solutions.

Higher memory densities can be achieved with 3D NAND by increasing the number of metal and oxide layers. We looked at how to avoid tier bending and collapse that can accompany increasing layers using SEMulator3D.

SEMulator3D® software is useful for semiconductor process modeling and virtual design Engineers can easily and vividly visualize complicated 3D structures with the tool Semiverse® Solutions,...

Tiny changes in critical dimension, gate height, and similar features of advanced logic devices, such as FinFET SRAM, can affect yield. Through virtual experiments using the SEMulator3D® platform, the Semiverse Solutions team discusses how material stress and mechanical deformation resulting from these changes can be managed to enhance device performance.

Ion Beam Etch (IBE) is a promising technology for extreme ultraviolet (EUV) lithography by significantly improving line edge roughness (LER) and line width roughness (LWR).

DWMG structures can help improve DRAM by reducing energy waste. These structures fix a known flaw called “gate-induced drain leakage” (GIDL).

To evaluate stress and mitigate its effects, predictive 3D process models can be used to predict the impact of mechanical stress on yield and performance.

The latest advancements in semiconductor interconnect technologies, focusing on optimizing metal pitch structures for sub-2nm nodes.

Intelligent machines enable faster design, production, maintenance, and process improvements. Numerous benefits can be gained from self-aware, self-maintained, and adaptive tools.